SIST EN 60749-4:2017
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017)
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017)
IEC 60749-4:2017(E) provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. This edition includes the following significant technical changes with respect to the previous edition:
a) clarification of requirements for temperature, relative humidity and duration detailed in Table 1;
b) recommendations that current limiting resistor(s) be placed in the test set-up to prevent test board or DUT damage;
c) allowance of additional time-to-test delay or return-to-stress delay.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 4: Feuchte Wärme, konstant, Prüfung mit hochbeschleunigter Wirkung (HAST) (IEC 60749-4:2017)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 4: Essai continu fortement acceléré de contrainte de chaleur humide (HAST) (IEC 60749-4:2017)
L’IEC 60749-4:2017 décrit un essai de contrainte de température et d’humidité fortement accéléré (HAST, highly accelerated temperature and humidity stress test) qui est réalisé dans le but d’évaluer la fiabilité des dispositifs à semiconducteurs sous boîtier non hermétique dans les environnements humides.
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
a) clarification des exigences relatives à la température, à l’humidité relative et à la durée d’exposition, détaillées dans le Tableau 1;
b) ajout de recommandations suggérant de placer une ou des résistances dans le montage d’essai, afin d’éviter d’endommager la carte d’essai ou le dispositif soumis à essai (DUT, Device Under Test);
c) spécification d’une autorisation d’extension du temps d’établissement des conditions d’essai ou du temps de retour à la contrainte.
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 4. del: Preskušanje z vlažno vročino, v ustaljenem stanju in z močno pospešenim obremenjevanjem (HAST) (IEC 60749-4:2017)
Ta del standarda IEC 60749 določa preskus z močno pospešenim temperaturnim in vlažnostnim obremenjevanjem (HAST) za namene vrednotenja zanesljivosti nehermetično pakiranih polprevodniških elementov v vlažnih okoljih.
General Information
- Status
- Published
- Publication Date
- 08-Aug-2017
- Technical Committee
- I11 - Imaginarni 11
- Current Stage
- 6060 - National Implementation/Publication (Adopted Project)
- Start Date
- 21-Jun-2017
- Due Date
- 26-Aug-2017
- Completion Date
- 09-Aug-2017
Relations
- Effective Date
- 20-Jun-2017
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
Overview
SIST EN 60749-4:2017 specifies the highly accelerated stress test (HAST) method for evaluating the reliability of non-hermetic packaged semiconductor devices exposed to humid environments. This standard, identical to IEC 60749-4:2017 and EN 60749-4:2017, is an essential tool for determining how semiconductor components withstand combined high temperature and high humidity, providing critical insights into device robustness for manufacturers, test labs, and quality assurance teams.
HAST, as described in this standard, is designed to accelerate the introduction of moisture-related failure mechanisms common in field conditions, offering a rapid means of assessing the long-term durability of semiconductor packages and materials.
Key Topics
Test Scope and Purpose
- Focuses on non-hermetic packaged semiconductor devices
- Accelerates humidity-related failure mechanisms, simulating prolonged exposure in a condensed timeframe
Technical Clarifications and Updates
- Details temperature, relative humidity, and duration requirements
- Recommends the use of current limiting resistors to prevent device under test (DUT) or board damage
- Allows for additional time-to-test delay or return-to-stress delay
HAST Test Apparatus and Procedures
- Requires a specialized chamber maintaining precise temperature, humidity, and pressure
- Specifies device mounting to avoid temperature gradients and ensure even exposure
- Calls for the use of de-ionized water to minimize ionic contamination
Biasing Guidelines
- Outlines best practices for electrical stress application, including continuous or cycled bias depending on device and test goals
- Stresses the importance of monitoring and distributing electrical stress for realistic and meaningful test results
Failure Criteria and Safety
- Defines failure as exceeding specified parametric limits or loss of functionality
- Emphasizes adherence to equipment manufacturer guidelines and local safety regulations
Applications
SIST EN 60749-4:2017 is widely used in the following contexts:
- Semiconductor Device Qualification
- Enables manufacturers to verify the reliability and performance of integrated circuits, discrete components, and other semiconductor packages before market release
- Quality Assurance and Reliability Testing
- Helps organizations compare competitive products and ensure compliance with international reliability standards
- Failure Analysis and Process Improvement
- Assists in identifying moisture-induced degradation mechanisms and drives improvements in packaging materials or manufacturing processes
- Procurement and Vendor Assessment
- Provides a standardized reference for customers to specify reliability test requirements in purchase agreements or vendor qualification protocols
The method’s broad applicability makes it a staple in the electronics, automotive, telecommunications, and industrial sectors, where device longevity in harsh environments is non-negotiable.
Related Standards
IEC 60749-5: Semiconductor devices - Mechanical and climatic test methods - Steady-state temperature humidity bias life test
- Often referenced alongside HAST for complementary stress evaluations; results from IEC 60749-5 take priority when both test methods are applied.
SIST EN 60749 Series
- Includes additional parts covering various mechanical and climatic test methods for semiconductor devices, supporting a comprehensive approach to device reliability testing.
General Quality and Reliability Standards
- ISO 9001 (Quality management systems)
- IEC 60068 (Environmental testing)
This standard is a key asset for any organization committed to delivering high-reliability semiconductor products capable of operating in challenging conditions. Implementing HAST per SIST EN 60749-4:2017 ensures robust, internationally recognized reliability assessment for modern semiconductor devices.
Frequently Asked Questions
SIST EN 60749-4:2017 is a standard published by the Slovenian Institute for Standardization (SIST). Its full title is "Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017)". This standard covers: IEC 60749-4:2017(E) provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. This edition includes the following significant technical changes with respect to the previous edition: a) clarification of requirements for temperature, relative humidity and duration detailed in Table 1; b) recommendations that current limiting resistor(s) be placed in the test set-up to prevent test board or DUT damage; c) allowance of additional time-to-test delay or return-to-stress delay.
IEC 60749-4:2017(E) provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. This edition includes the following significant technical changes with respect to the previous edition: a) clarification of requirements for temperature, relative humidity and duration detailed in Table 1; b) recommendations that current limiting resistor(s) be placed in the test set-up to prevent test board or DUT damage; c) allowance of additional time-to-test delay or return-to-stress delay.
SIST EN 60749-4:2017 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.
SIST EN 60749-4:2017 has the following relationships with other standards: It is inter standard links to SIST EN 60749-4:2004, SIST EN IEC 60749-5:2024, SIST EN IEC 60749-30:2020, SIST EN 60749-5:2017, SIST EN 62047-4:2010. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
SIST EN 60749-4:2017 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.
Standards Content (Sample)
SLOVENSKI STANDARD
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Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat,
steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 4: Feuchte
Wärme, konstant, Prüfung mit hochbeschleunigter Wirkung (HAST) (IEC 60749-4:2017)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 4:
Essai continu fortement acceléré de contrainte de chaleur humide (HAST) (IEC 60749-
4:2017)
Ta slovenski standard je istoveten z: EN 60749-4:2017
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN 60749-4
NORME EUROPÉENNE
EUROPÄISCHE NORM
June 2017
ICS 31.080.01 Supersedes EN 60749-4:2002
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 4: Damp heat, steady state, highly accelerated stress test
(HAST)
(IEC 60749-4:2017)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 4: Essai continu Prüfverfahren - Teil 4: Feuchte Wärme, konstant, Prüfung
fortement acceléré de contrainte de chaleur humide (HAST) mit hochbeschleunigter Wirkung (HAST)
(IEC 60749-4:2017) (IEC 60749-4:2017)
This European Standard was approved by CENELEC on 2017-04-07. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 60749-4:2017 E
European foreword
The text of document 47/2346/FDIS, future edition 2 of IEC 60749-4, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN 60749-4:2017.
The following dates are fixed:
• latest date by which the document has to be implemented at (dop) 2018-01-07
national level by publication of an identical national
standard or by endorsement
• latest date by which the national standards conflicting with (dow) 2020-04-07
the document have to be withdrawn
This document supersedes EN 60749-4:2002.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice
The text of the International Standard IEC 60749-4:2017 was approved by CENELEC as a European
Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod),
the relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is
available here: www.cenelec.eu.
Publication Year Title EN/HD Year
1)
IEC 60749-5 - Semiconductor devices - Mechanical EN 60749-5 -
and climatic test methods - Part 5:
Steady-state temperature humidity bias
life test
1) To be published.
IEC 60749-4 ®
Edition 2.0 2017-03
INTERNATIONAL
STANDARD
Semiconductor devices – Mechanical and climatic test methods –
Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01 ISBN 978-2-8322-4002-1
– 2 – IEC 60749-4:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 HAST test – General remarks . 5
5 Test apparatus . 6
5.1 Test apparatus requirements . 6
5.2 Controlled conditions . 6
5.3 Temperature profile . 6
5.4 Devices under stress . 6
5.5 Minimize release of contamination . 6
5.6 Ionic contamination . 6
5.7 De-ionized water . 6
6 Test conditions . 6
6.1 Test conditions requirements . 6
6.2 Biasing guidelines . 7
6.3 Choosing and reporting . 8
7 Procedure . 8
7.1 Test device mounting . 8
7.2 Ramp-up . 8
7.3 Ramp-down . 8
7.4 Test clock . 8
7.5 Bias . 8
7.6 Readout . 9
7.7 Handling . 9
7.8 Calibration records . 9
8 Failure criteria . 9
9 Safety . 9
10 Summary . 9
Table 1 – Temperature, relative humidity and duration requirements . 7
Table 2 – Bias and reporting requirements . 8
IEC 60749-4:2017 © IEC 2017 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 4: Damp heat, steady state,
highly accelerated stress test (HAST)
FOREWORD
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International Standard IEC 60749-4 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following signif
...