SIST EN 60749-23:2004
(Main)Semiconductor devices - Mechanical and climatic test methods -- Part 23: High temperature operating life
- Abstract
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
- Status
- Published
- Publication Date
- 30-Jun-2004
- Technical Committee
- I11 - Imaginarni 11
- Current Stage
- 6060 - National Implementation/Publication (Adopted Project)
- Start Date
- 01-Jul-2004
- Due Date
- 01-Jul-2004
- Completion Date
- 01-Jul-2004
SIST EN 60749-23:2004 is a Slovenian national adoption of EN 60749-23:2004 for semiconductor devices, published by SIST. It specifies the high temperature operating life test, an accelerated method for checking how bias conditions and temperature affect solid state devices over time. Engineers, reliability labs, and quality teams use it for device qualification and reliability monitoring.
What does SIST EN 60749-23:2004 specify?
SIST EN 60749-23:2004 specifies a test method for semiconductor devices subjected to temperature and electrical bias over time. It is written for accelerated life testing, so the results can be used to judge operating reliability under stress conditions.
The scope also mentions a short-duration form of high temperature bias life, often called burn-in, which may be used to screen for infant mortality failures. The detailed use of burn-in is outside the scope of this document.
The document is organized into:
- Clause 1 - Scope
- Clause 2 - Normative references
- Clause 3 - Terms and definitions
- Clause 4 - Test apparatus
- Clause 5 - Procedure
- Clause 6 - Cool-down
- Clause 7 - Measurements
- Clause 8 - Failure criteria
- Clause 9 - Summary
- Annex ZA - Normative references to international publications and their European publications
| Annex | What it covers |
|---|---|
| ZA | Normative references and the corresponding European publications |
What are the key requirements of SIST EN 60749-23:2004?
Test setup and equipment
Clause 4 requires test equipment that can create the specified stress conditions and hold them stable. The circuit must avoid overstressing the devices or causing thermal runaway, and it must limit power dissipation so one failed part does not overdrive the others.
The mounting arrangement should reduce unwanted heating effects, and the instruments used to set up and monitor supplies and signals must be calibrated and stable. The environmental chamber must hold the specified temperature within ±5 °C while the parts are loaded and unpowered.
Stress conditions and operating modes
Clause 5 says the stress duration is set by the relevant specification and should be long enough to represent field life under use conditions. Stress is continuous except during interim measurements, and time spent changing chamber conditions or measuring does not count toward the specified duration.
Unless otherwise specified, high temperature stress uses a junction temperature of 125 °C for 1 000 h, and the operating voltage should normally be the device’s maximum operating voltage. A higher voltage may be used to increase acceleration, but it must not exceed the absolute maximum rated voltage and must be agreed with the manufacturer.
Clause 5 also defines the main bias modes:
- HTFB - forward bias on major power junctions, typically for power devices, diodes, and discrete transistors
- HTOL/LTOL - operating-node biasing, typically for logic, memory, and some submicron devices
- HTRB - reverse bias of major power junctions, typically for power devices
- HTGB - gate or oxide bias, typically for power devices
In practice, this tells the user which stress mode fits the device type and which junctions or nodes should be driven during test.
Cool-down, measurements, and failure
Clause 6 requires devices under high temperature stress to be cooled to 55 °C or lower before bias is removed. Cooling under bias is not required if the manufacturer provides verification data, which is important when a process or technology has already been qualified.
Clause 7 requires measurements at the start, at each interim read point, and at the end of the life test. Electrical testing must be completed as soon as possible and no later than 96 h after bias removal, unless verification data allows an alternative approach.
Clause 8 classifies a device as failed if it does not meet the relevant specification. Clause 9 says the applicable specification must state the stress temperature, duration, mounting, circuit schematic, sample size and acceptance number, operating mode, interim read points, maximum junction temperature, and any verification data used in place of cool-down under bias.
What terms does SIST EN 60749-23:2004 define?
- Maximum operating voltage - the highest supply voltage at which the device is specified to operate correctly in its device specification or data sheet.
- Absolute maximum rated voltage - the highest voltage that may be applied without risking damage.
- Absolute maximum rated junction temperature - the highest junction temperature an operating device may reach without risking damage.
- Bias - the application of voltage to the power pins.
- HTFB - high temperature forward bias, a stress mode that forward biases major power junctions.
- HTOL/LTOL - high temperature operating life / low temperature operating life, stress modes that bias the device’s operating nodes.
- HTRB - high temperature reverse bias, a stress mode for reverse biasing major power junctions.
- HTGB - high temperature gate bias, a stress mode that biases gate or oxide structures.
Who uses SIST EN 60749-23:2004?
SIST EN 60749-23:2004 is used by semiconductor device manufacturers, reliability engineers, and test laboratories. It supports device qualification, reliability monitoring, and stress testing for power devices, diodes, discrete transistors, logic devices, and memory devices. Quality teams and buyers can also use it to define and review life test conditions in purchase or qualification specifications.
Which standards are used with SIST EN 60749-23:2004?
- IEC 60747 (all parts) - provides the family of semiconductor device standards that contain device requirements used when judging pass or fail.
- IEC 60749-34: - Power cycling - is a companion mechanical and climatic test method; the document says HTFB for power devices is complementary to it.
- Annex ZA references EN 60747 Series and EN 60749-34:2004 as the European publications corresponding to the IEC references.
What does the SIST EN 60749-23:2004 document contain?
The document gives the test structure for high temperature operating life testing, starting with scope, references, and key definitions. It then covers apparatus, bias circuits, device mounting, chamber performance, stress duration, stress conditions, cool-down, measurement timing, and failure criteria.
Annex ZA adds the European mapping for the normative references, which helps users apply the document in the EN system. The summary clause also tells users exactly what their application specification must state before testing starts.
Relations
- Effective Date
- 01-Mar-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 01-May-2011
Frequently Asked Questions
SIST EN 60749-23:2004 is a standard published by the Slovenian Institute for Standardization (SIST). Its full title is "Semiconductor devices - Mechanical and climatic test methods -- Part 23: High temperature operating life". This standard covers: This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
SIST EN 60749-23:2004 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.
SIST EN 60749-23:2004 has the following relationships with other standards: It is inter standard links to SIST EN IEC 60749-23:2026, SIST EN 60749-34:2004, SIST EN 60747-15:2004, SIST EN IEC 60749-41:2020, SIST EN 60749-43:2017, SIST EN 60749-34:2011, SIST EN IEC 63287-1:2021, SIST EN 62047-4:2010, SIST EN 60749-23:2004/A1:2011. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
SIST EN 60749-23:2004 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.
Standards Content (Sample)
SLOVENSKI SIST EN 60749-23:2004
STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life (IEC 60749-23:2004)
ICS 31.080.01 Referenčna številka
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
EUROPEAN STANDARD EN 60749-23
NORME EUROPÉENNE
EUROPÄISCHE NORM April 2004
ICS 31.080.01
English version
Semiconductor devices –
Mechanical and climatic test methods
Part 23: High temperature operating life
(IEC 60749-23:2004)
Dispositifs à semiconducteurs – Halbleiterbauelemente –
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques Prüfverfahren
Partie 23: Durée de vie en Teil 23: Lebensdauer bei hoher
fonctionnemement à haute température Temperatur
(CEI 60749-23:2004) (IEC 60749-23:2004)
This European Standard was approved by CENELEC on 2004-04-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden,
Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-23:2004 E
Foreword
The text of document 47/1735/FDIS, future edition 1 of IEC 60749-23, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-23 on 2004-04-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2005-01-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2007-04-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60749-23:2004 was approved by CENELEC as a European
Standard without any modification.
__________
- 3 - EN 60749-23:2004
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE Where an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
IEC 60747 Series Semiconductor devices – Discrete EN 60747 Series
devices and integrated circuits
1) 2)
IEC 60749-34 - Semiconductor devices - Mechanical and EN 60749-34 2004
climatic test methods
Part 34: Power cycling
1)
Undated reference.
2)
Valid edition at date of issue.
NORME CEI
INTERNATIONALE
IEC
60749-23
INTERNATIONAL
Première édition
STANDARD
First edition
2004-02
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 23:
Durée de vie en fonctionnement
à haute température
Semiconductor devices –
Mechanical and climatic test methods –
Part 23:
High temperature operating life
© IEC 2004 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
CODE PRIX
J
PRICE CODE
Commission Electrotechnique Internationale
International Electrotechnical Commission
ɆɟɠɞɭɧɚɪɨɞɧɚɹɗɥɟɤɬɪɨɬɟɯɧɢɱɟɫɤɚɹɄɨɦɢɫɫɢɹ
Pour prix, voir catalogue en vigueur
For price, see current catalogue
60749-23 © IEC:2004 – 3 –
CONTENTS
FOREWORD.5
1 Scope.9
2 Normative references.9
3 Terms and definitions .9
4 Test apparatus.11
4.1 Circuitry.11
4.1.1 Device schematic.11
4.1.2 Power.11
4.2 Device mounting.11
4.3 Power supplies and signal sources.11
4.4 Environmental chamber.11
5 Procedure.11
5.1 Stress duration.13
5.2 Stress conditions.13
5.2.1 Ambient temperature.13
5.2.2 Operating voltage.13
5.2.3 Biasing configurations.13
6 Cool-down.15
7 Measurements.15
8 Failure criteria.17
9 Summary.17
60749-23 © IEC:2004 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 23: High temperature operating life
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-23 has been prepared by IEC technical committee 47:
Semiconductor devices.
This first edition is based on the IEC/PAS 62189 (2000).
The text of this standard is based on the following documents:
FDIS Report on voting
47/1735/FDIS 47/1745/RVD
Full information on the voting for the approval of this standard ca
...