oSIST prEN IEC 63608-1:2026

SLOVENSKI STANDARD
01-junij-2026
Polprevodniški elementi - Preskusne metode zanesljivosti za vibracijske
energetske zbiralnike - 1. del: Mehanska zanesljivost pri udarcih
Semiconductor devices - Reliability test methods for vibration energy harvesters - Part 1:
Mechanical reliability under shock
Ta slovenski standard je istoveten z: prEN IEC 63608-1:2026
ICS:
31.080.99 Drugi polprevodniški elementi Other semiconductor devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

47/3000/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 63608-1 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2026-04-03 2026-06-26
SUPERSEDES DOCUMENTS:
47/2905/CD, 47/2997/CC
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
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TITLE:
Semiconductor devices - Reliability test methods for vibration energy harvesters - Part 1:
Mechanical reliability under shock

PROPOSED STABILITY DATE: 2031
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IEC CDV 63608-1 ED1 © IEC 2026
1 CONTENTS
3 FOREWORD . 3
4 1 Scope . 5
5 2 Normative references . 5
6 3 Terms and definitions . 5
7 4 Test apparatus and equipment . 7
8 4.1 General . 7
9 4.2 Mounting fixture . 7
10 4.3 Drop tester . 7
11 4.4 Vibration exciter . 8
12 4.5 Function generator (FG) . 8
13 4.6 Power amplifier . 8
14 4.7 Accelerometer . 8
15 4.8 Signal measurement equipment . 8
16 4.9 Load resistance . 8
17 5 DUT . 8
18 5.1 General . 8
19 5.2 Mechanical characteristics . 8
20 5.3 Electrical characteristics . 9
21 5.4 General . 9
22 5.5 Shock . 9
23 5.6 Vibration at resonance . 10
24 5.7 Frequency sweep . 11
25 5.8 Free fall . 11
26 6 Test procedure . 11
27 7 Test report . 13
28 Annex A (informative) Example of resonance test for cantilever-type
29 piezoelectric VEH [1] . 15
30 A.1 DUT . 15
31 A.2 Test procedure . 16
32 A.3 Results . 17
IEC CDV 63608-1 ED1 © IEC 2026
33 Annex B (informative) Example of shock reliability test for MEMS electrostatic
34 type VEH aimed at commercialization [2] . 18
35 B.1 DUT . 18
36 B.2 Test procedure . 18
37 B.2.1 Frequency sweep . 18
38 B.2.2 Half-sine shock . 19
39 B.2.3 Free Fall . 20
40 B.3 Results . 20
41 Bibliography . 20
43 Figure 1 – Drop tester . 10
44 Figure 2 – Vibration exciter . 10
45 Figure 3 – Half-sine waveform . 10
46 Figure 4 – Free fall . 11
47 Figure 5 – Test setup for the electrical characteristics . 12
48 Figure 6 – Graphical record of output power . 12
49 Figure A.1 – Cross section of the cantilever-type piezoelectric VEH. 15
50 Figure A.2 – Radius of curvature vs. stress in fixed part . 15
51 Figure A.3 – SEM image of fillet shape . 16
52 Figure A.4 – Test environment . 16
53 Figure A.5 – MEMS sample and resin package . 17
54 Figure A.6 – Destruction test by resonance drive . 17
55 Figure B.1 – Electrostatic electret type MEMS-VEH . 18
56 Figure B.2 – Fixture on vibration exciter . 19
57 Figure B.3 – Measurement apparatus for sweep test . 19
58 Figure B.4 – Measurement apparatus for shock test . 19
59 Figure B.5 – Waveform of half-sine . 20
60 Figure B.6 – Free-fall test with packaging box . 20
62 Table B.1 – Test results for three samples . 20
IEC CDV 63608-1 ED1 © IEC 2026
66 INTERNATIONAL ELECTROTECHNICAL COMMISSION
67 ____________
69 SEMICONDUCTOR DEVICES
70 – RELIABILITY TEST METHODS FOR VIBRATION ENERGY HARVESTERS –
71 Part 1: Mechanical Reliability Under Shock
75 FOREWORD
76 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national
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84 determined by agreement between the two organizations.
85 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus
86 of opinion on the relevant subjects since each technical committee has representation from all interested IEC National
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97 6) All users should ensure that they have the latest edition of this publication.
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101 publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
102 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
103 indispensable for the correct application of this publication.
104 9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a) patent(s). IEC
105 takes no position concerning the evidence, validity or applicability of any claimed patent rights in respect thereof. As of
106 the date of publication of this document, IEC had not received notice of (a) patent(s), which may be required to implement
107 this document. However, implementers are cautioned that this may not represent the latest information, which may be
108 obtained from the patent database available at https://patents.iec.ch or www.iso.org/patents. IEC shall not be held
109 responsible for identifying any or all such patent rights.
110 IEC 63608-1 has been prepared by IEC technical committee TC47: Semiconductor Devices. It
111 is an International Standard.
113 The text of this International Standard is based on the following documents:
IEC CDV 63608-1 ED1 © IEC 2026
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
115 Full information on the voting for its approval can be found in the report on voting indicated in
116 the above table.
117 The language used for the development of this International Standard is English.
118 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
119 accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, [and the
120 ISO/IEC Directives, JTC 1 Supplement] available at www.iec.ch/members_experts/refdocs. The
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123 The committee has decided that the contents of this document will remain unchanged until the
124 stability date indicated on the IEC website under webstore.iec.ch in the data related to the
125 specific document. At this date, the document will be
126 • reconfirmed,
127 • withdrawn,
128 • replaced by a revised edition, or
129 • amended.
IEC CDV 63608-1 ED1 © IEC 2026
132 SEMICONDUCTOR DEVICES
133 –RELIABILITY TEST METHODS FOR VIBRATION ENERGY HARVESTERS–
135 Part 1: Mechanical Reliability Under Shock
139 1 Scope
140 This document specifies test methods for the mechanical reliability of vibration energy
141 harvesting devices. This standard applies to all vibration energy harvesting devices, regardless
142 of size and power generation principle. The method includes shock, vibration, frequency sweep,
143 and drop tests. Shock vibration covers a wide range of definitions, including its peak
144 acceleration, duration/frequency, and the shape of the shock pulse (e.g., half-sine, square,
145 sawtooth, etc.). According to typical usage conditions, the change in power is measured before
146 and after the tests under conditions that include actual power management circuits or load
147 resistances. Fatigue and long-term reliability are excluded.
148 2 Normative references
149 The following documents are referred to in the text in such a way that some or all of their content
150 constitutes requirements of this document. For dated references, only the edition cited applies.
151 For undated references, the latest edition of the referenced document (including any
152 amendments) applies.
153 IEC 60068-2-6, Environmental testing - Part 2-6: Tests - Test Fc: Vibration (sinusoidal)
154 IEC 60068-2-27, Environmental testing - Part 2-27: Tests - Test Ea and guidance: Shock
155 IEC 60068-2-31, Environmental testing - Part 2-31: Tests - Test Ec: Rough handling shocks,
156 primarily for equipment-type specimens
157 IEC 62969-3, Semiconductor devices - Semiconductor interface for automotive vehicles - Part
158 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
159 3 Terms and definitions
160 For the purposes of this document, the following terms and definitions apply.
161 ISO and IEC maintain terminology databases for use in standardization at the following
162 addresses:
163 • IEC Electropedia: available at https://www.electropedia.org/
164 • ISO Online browsing platform: available at https://www.iso.org/obp
166 3.1
167 Vibration Energy Harvester
168 VEH
IEC CDV 63608-1 ED1 © IEC 2026
169 small size electric power generators by mechanical motion input
170 Note 1 to entry: Typical energy transforming methods are piezoelectric, electrostatic, electromagnetic , triboelectric, and
171 magnetostrictive systems.
172 3.2
173 mechanical motion
174 movement of an object with six degrees of freedom—three translational (X, Y, Z) and
175 three rotational (around X, Y, Z axes)
176 3.3
177 nominal parameter
178 specified or designed parameter used as a reference or target
179 Note 1 to entry: E.g., vibration frequency, applied acceleration, motion amplitude, operating temperature range, operating
180 humidity range, and load resistance etc.
181 3.4
182 shock
183 rapid acceleration or deceleration caused by a transient physical stimulus
184 Note 1 to entry: Characterized by the peak acceleration, duration/frequency, and shape of the shock pulse (e.g., half -sine,
185 square, sawtooth, etc.).
186 [SOURCE: IEC 62969-3, 3.1.1]
187 3.5
188 resonant frequency
189 frequency at which a system tends to vibrate with the maximum amplitude due to
190 resonance. For an undamped single degree-of-freedom (SDOF) system, the natural
191 (resonant) frequency f is given by:
n
1 𝑘
√
192 𝑓 =
𝑛
2𝜋 𝑚
193 where k is the stiffness and m is the mass of the system.
194 In the case of damping, the damped natural frequency f is:
d
𝟐
195 𝒇 =𝒇 √𝟏−𝛇
𝒅 𝒏
197 where ζ is the damping ratio.
198 Resonance occurs when the excitation frequency approaches fₙ or f , resulting in
d
199 increased amplitude of vibration.
IEC CDV 63608-1 ED1 © IEC 2026
200 3.6
201 damping / damped natural frequency
202 dissipation of energy of an oscillating system with time or distance / frequency of free
203 oscillation of a damped linear system
204 [SOURCE: Electropedia]
205 3.7
206 frequency sweep
207 frequency of vibration is varied to examine the behaviour at different frequencies. The
208 direction in which the frequency is increased or decreased, and the rate of frequency
209 change are also of interest specified or designed parameter used as a reference or
210 target
211 3.8
212 shock response spectrum
213 SRS
214 graphical representation of the magnitude of a structural response to a transient
215 impact or shock event over a range of frequencies. It is used to evaluate and quantify
216 potential damage and structural response to sudden, short duration forces and can be
217 calculated from the amplitude, duration and shape of the shock pulse specified or
218 designed parameter used as a reference or target
219 3.9
220 output power
221 [SOURCE: IEC 62969-3, 5.2.7]
222 4 Test apparatus and equipment
...