ISO 13083:2015

INTERNATIONAL ISO
STANDARD 13083
First edition
2015-08-15
Surface chemical analysis — Scanning
probe microscopy — Standards on the
definition and calibration of spatial
resolution of electrical scanning probe
microscopes (ESPMs) such as SSRM
and SCM for 2D-dopant imaging and
other purposes
Analyse chimique des surfaces - Microscopie à sonde à balayage -
Normes sur la définition et l’étalonnage de la résolution spatiale des
microscopes électriques à sonde à balayage (ESPMs) comme SSRM et
SCM pour l’imagerie 2D-dopant et d’autres fins
Reference number
©
ISO 2015
© ISO 2015, Published in Switzerland
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ii © ISO 2015 – All rights reserved

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Symbols and abbreviated terms . 1
5 General information . 2
5.1 Background information . 2
5.2 Target . 2
5.2.1 Scanning capacitance microscope . 2
5.2.2 Scanning spreading resistance microscope . 2
5.3 Measurement method for lateral resolution in SCM and SSRM . 3
5.4 Key parameters in determining the lateral resolution . 5
6 Measurement of lateral resolution of SCM with the sharp-edge method .5
6.1 Background information . 5
6.2 Selection of the sample . 5
6.3 Setting the parameters before the operation of the instrument . 6
6.4 Data collection . 6
6.5 Data analysis . 6
6.5.1 Obtaining the resolution . 6
6.5.2 Random contributions to the resolution value . 7
6.6 Recording of the parameters . 7
7 Measurement of lateral resolution of SSRM with the sharp-edge method .8
7.1 Background information . 8
7.2 Selection of the sample . 8
7.3 Setting the parameters before the operation of the instrument . 8
7.4 Data collection . 8
7.5 Data analysis . 8
7.5.1 Obtaining the resolution . 8
7.5.2 Random contributions to the resolution value . 9
7.6 Recording of the parameters . 9
Annex A (informative) An example of the measurement of SCM resolution .10
Annex B (informative) An example of the measurement of SSRM resolution .12
Bibliography .14
Foreword
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The committee responsible for this document is ISO/TC 201, Surface chemical analysis, Subcommittee
SC 9, Scanning probe microscopy.
iv © ISO 2015 – All rights reserved

Introduction
Electrical scanning probe microscopy (ESPM) is a branch of scanning probe microscopy (SPM) with
the capability of electrical imaging at nanometre spatial resolution. ESPM includes electrostatic force
microscopy (EFM), scanning capacitance microscopy (SCM), scanning spreading resistance microscopy
(SSRM), etc. Because ESPM can observe electrical or electronic properties with molecule-scale
resolution, it is applied to many fields such as semiconductors, displays, etc. However, there has been no
standard measurement method for the spatial resolution.
In this International Standard, standardized procedures to determine the spatial (lateral) resolution
of SSRM and SCM, which are widely used to image the distribution of carrier and other electrical
properties in semiconductor devices, are provided with the use of suitable reference materials. This
International Standard uses the sharp-edge method to measure the lateral resolution of ESPM in a
similar manner to that already used in measuring the resolution in micro-beam spectroscopy and in
depth-profiling measurements with Auger electron spectroscopy and X-ray photoelectron spectroscopy
(refer to ISO 18516).
INTERNATIONAL STANDARD ISO 13083:2015(E)
Surface chemical analysis — Scanning probe microscopy
— Standards on the definition and calibration of spatial
resolution of electrical scanning probe microscopes
(ESPMs) such as SSRM and SCM for 2D-dopant imaging and
other purposes
1 Scope
This International Standard describes a method for measuring the spatial (lateral) resolution of
scanning capacitance microscopes (SCMs) or scanning spreading resistance microscopes (SSRMs),
which are widely used in imaging the distribution of carriers and other electrical properties in
semiconductor devices. The method involves the use of a sharp-edged artefact.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
ISO 18115-2, Surface chemical analysis – Vocabulary – Part 2: Terms used in scanning-probe microscopy
3 Terms and definitions
For the purposes of this document, the terms and definitions given in ISO 18115-2 and the following apply.
3.1
electrical scanning probe microscopy
ESPM
SPM mode in which a conductive tip is used to measure electrical properties such as capacitance,
resistance, electrical field, etc.
3.2
contact mode
mode of scanning the probe tip over the sample surface, adjusting the relative heights of the probe and
sample, in which there is always a repulsive force between the probe and the sample
Note 1 to entry: This mode can be, for example, either the constant-height or constant-force mode.
[SOURCE: ISO 18115-2:2013, 6.35]
4 Symbols and abbreviated terms
AC alternating current
DC direct current
ESPM electrical scanning probe microscopy
SPM scanning probe microscopy
AFM atomic force microscopy
MIS metal-insulator-semiconductor
MOS metal-oxide-semiconductor
SCM scanning capacitance microscopy
SIMS secondary ion mass spectroscopy
S/N signal to noise ratio
SSRM scanning spreading resistance microscopy
TEM transmission electron microscope
2D two dimension
Δx spatial resolution of ESPM
5 General information
5.1 Background information
ESPM is a branch of scanning probe microscope that can be used to image an electrical or electronic
property of a sample surface using an electrically conducting probe. Since this conductive probe is
scanned over the sample surface in the contact mode, its lateral resolution is strongly related to the
size and shape of the probe apex. Currently, this can be as small as a few nanometres, enabling sub-10
nanometre spatial resolution to be achieved. Such a high resolution, shown in ESPM images, allows the
investigation of the two-dimensional distribution of carriers in nanoscale semiconductor devices.
5.2 Target
There are a number of types of ESPM categorized by the methods of electrical characterization. Among
these ESPMs, this International Standard is for SCM and SSRM.
5.2.1 Scanning capacitance microscope
Scanning capacitance microscopy (SCM) is a modification of scanning probe microscopy in which a
conductive probe is in contact with the surface of a sample, with an applied AC bias, and scanned across
it. SCM characterizes the change in electrostatic capacitance between the sample and the probe on
the surface of the sample. SCM uses an ultra-sharp conducting probe made from etched silicon (often
coated with Pt/Ir or Co/Cr alloy) to form a metal-insulator-semiconductor (MIS/MOS) capacitor with a
semiconductor sample if a native oxide exists on the sample. When the conducting probe is in contact
to the surface under an AC bias, generated capacitance variations on the surface can be detected using
a GHz resonant capacitance sensor. The probe is then scanned acr
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